Substrate for semiconductor package and method of manufacturing thereof

ABSTRACT

Disclosed is a substrate for a semiconductor package in which leakage of radiation noise from a gap between a semiconductor element and a mounting substrate can be prevented. The substrate for the semiconductor package includes a coplanar waveguide including a signal and ground electrodes on the mounting substrate, the signal electrode flip-chip connected to the semiconductor element, the ground electrodes arranged on both sides of the signal electrode with intervals therebetween. A step part is formed in the ground electrodes in an outer circumferential part of a mounting region of the semiconductor element, the step part having a larger distance between upper surfaces of the mounting substrate and the ground electrode in the outer circumferential part of the mounting region than such distance in the mounting region, and an insulator for covering the signal electrode in the outer circumferential part of the mounting region is formed.

REFERENCE TO RELATED APPLICATION

This application is a Divisional of U.S. patent application Ser. No.13/383,895, filed on Jan. 13, 2012, which is a National Stage ofInternational Application No. PCT/JP2010/004239, filed on Jun. 25, 2010,which claims priority from Japanese Patent Application No. 2009-168831,filed on Jul. 17, 2009, the contents of all of which are incorporatedherein by reference in their entirety.

TECHNICAL FIELD

The present invention relates to a substrate for a semiconductorpackage, a semiconductor package, a method of manufacturing thesubstrate for the semiconductor package, and a method of manufacturingthe semiconductor package.

BACKGROUND ART

In recent years, along with high frequency in semiconductor elements, asemiconductor package (a structure in which one semiconductor element ismounted on a substrate for package) and a composite module (a structurein which a plurality of semiconductor elements are mounted on asubstrate for module) suitable for transmission of high-frequencysignals have been developed. In related arts, a semiconductor packageincluding a semiconductor element connected to a mounting substrate bywire bonding has mainly been used. However, according to such asemiconductor package, it is impossible to sufficiently achieve highfrequency characteristic due to inductance components of a wire, andperformance of the semiconductor package varies due to manufacturingvariations of a wire length. Further, an active surface faces upward(face-up mounting) in the semiconductor element that is connected bywire bonding, which increases radiation noise. Accordingly, a method ofcovering the semiconductor element with a metal cap for anelectromagnetic shield is employed in the semiconductor package in whicha semiconductor element of high frequency is face-up mounted.

On the other hand, another semiconductor package is reported that uses aflip-chip connection (face-down mounting) in which a bump is formed in aconnection pad of a semiconductor element and the semiconductor elementis connected to a mounting substrate so that an active surface of thesemiconductor element faces the mounting substrate. According to theflip-chip connection, the semiconductor element and the mountingsubstrate are connected in a short distance compared to face-up mountingby wire bonding, which can reduce transmission loss of signals. Further,manufacturing variations can be reduced and the device can bemanufactured with low cost. Further, since the active surface of thesemiconductor element faces the side of the mounting substrate,radiation noise can be made small by providing a ground electrode thatis sufficiently wide on the mounting substrate (grounding measure).Another technique to cover a semiconductor element mounted on a mountingsubstrate with a conductor serving as an electromagnetic shield has beendeveloped as a structure with no metal cap (e.g., see patent literatures1 and 2).

CITATION LIST Patent Literature

-   PTL 1: Japanese Unexamined Patent Application Publication No.    2002-26178-   PTL 2: Japanese Unexamined Patent Application Publication No.    10-92981

SUMMARY OF INVENTION Technical Problem

FIG. 18 is a schematic view showing a schematic structure of asemiconductor package 100 disclosed in a patent literature 1. As shownin FIG. 18, it is required in the semiconductor package 100 that aconductor 103 is configured to be connected to a ground electrode on asurface of a mounting substrate 101 (a surface opposite to asemiconductor element 102). However, other electrodes than the groundelectrode including a signal line cannot be provided on the surface ofthe mounting substrate 101. Accordingly, the mounting substrate 101 inthe semiconductor package 100 has a laminated structure of a pluralityof layers in which via holes are formed inside so as to draw a signalline to outside (a rear surface of the mounting substrate 101).

Even when the signal line is provided on the surface of the mountingsubstrate 101, the conductor 103 that serves as an electromagneticshield cannot be provided on an upper surface of the signal line.Accordingly, radiation noise may leak from a gap between the mountingsubstrate 101 and the semiconductor element 102 where the conductor 103cannot be provided.

FIG. 19 is a schematic view showing a schematic structure of asemiconductor package 200 disclosed in a patent literature 2. As shownin FIG. 19, in the semiconductor package 200, a conductor 204 isconfigured to cover side surfaces of an underfill resin 203 and sidesurfaces of a semiconductor element 202. In the semiconductor package200 as well, other electrodes than the ground electrode including asignal line cannot be provided on a surface of a mounting substrate 201,as is similar to the case in the patent literature 1.

The present invention has been made in view of the above-describedcircumstances. An exemplary object of the present invention is toprovide a substrate for a semiconductor package, a semiconductorpackage, a method of manufacturing the substrate for the semiconductorpackage, and a method of manufacturing the semiconductor package capableof preventing leakage of radiation noise from a gap between thesemiconductor element and the mounting substrate.

Solution to Problem

In order to solve the problems described above, a substrate for asemiconductor package according to the present invention includes: acoplanar waveguide including a signal electrode and ground electrodes ona mounting substrate having a semiconductor element mounted thereon, thesignal electrode flip-chip connected to the semiconductor element with abump therebetween, the ground electrodes arranged on both sides of thesignal electrode with intervals therebetween, in which, a step part isformed in the ground electrodes in an outer circumferential part of amounting region of the semiconductor element, the step part having alarger distance between an upper surface of the mounting substrate andan upper surface of the ground electrode in the outer circumferentialpart of the mounting region than such distance in the mounting region,and an insulator for covering the signal electrode in the outercircumferential part of the mounting region is formed.

Advantageous Effects of Invention

According to the present invention, a step part is formed in the groundelectrodes in the outer circumferential part of the mounting region ofthe semiconductor element on the mounting substrate. Further, theinsulator is formed to cover the signal electrode in the outercircumferential part of the mounting region. Accordingly, when thesemiconductor element is mounted on the mounting substrate, radiationnoise generated from the active surface of the semiconductor element isshielded by the step part which serves as an electromagnetic shield wallformed in the outer circumferential part of the mounting region on themounting substrate. In summary, since the surface (surface in the sideof the semiconductor element) of the mounting substrate is not flat,radiation noise can be prevented from being propagated along the surfaceof the mounting substrate. Further, when a conductor is formed as anelectromagnetic shield which covers the semiconductor element, theground electrode and the insulator can be used as the bases so that theconductor does not contact the signal electrode. Further, the conductorcan be formed on the ground electrode and the insulator without any gap.Accordingly, when the semiconductor element is mounted on the mountingsubstrate, radiation noise can be prevented from being leaked from a gapbetween the semiconductor element and the mounting substrate.

BRIEF DESCRIPTION OF DRAWINGS

FIG. 1 is a plane view showing a substrate for a semiconductor packageaccording to the present invention;

FIG. 2 is a cross-sectional view taken along the line X1-X1′ of FIG. 1;

FIG. 3 is a cross-sectional view taken along the line X2-X2′ of FIG. 1;

FIG. 4 is a cross-sectional view taken along the line Y1-Y1′ of FIG. 1;

FIG. 5 is a cross-sectional view taken along the line Y2-Y2′ of FIG. 1;

FIG. 6 is a plane view showing a semiconductor package according to afirst embodiment of the present invention;

FIG. 7 is a cross-sectional view taken along the line X3-X3′ of FIG. 6;

FIG. 8 is a cross-sectional view taken along the line X4-X4′ of FIG. 6;

FIG. 9 is a cross-sectional view taken along the line Y3-Y3′ of FIG. 6;

FIG. 10 is a process diagram showing a manufacturing process of thesemiconductor package according to the present invention;

FIG. 11 is a process diagram following FIG. 10;

FIG. 12 is a process diagram following FIG. 11;

FIG. 13 is a schematic view showing a cross-sectional structure of asemiconductor device according to a second embodiment of the presentinvention;

FIG. 14 is a schematic view showing a cross-sectional structure of asemiconductor device according to a third embodiment of the presentinvention;

FIG. 15 is a process diagram showing a manufacturing process of asemiconductor package according to a related art as a comparativeexample;

FIG. 16 is a process diagram following FIG. 15;

FIG. 17 is a cross-sectional view taken along the line X5-X5′ of FIG.16;

FIG. 18 shows a cross-sectional structure of a semiconductor packageaccording to a patent literature 1; and

FIG. 19 shows a cross-sectional structure of a semiconductor packageaccording to a patent literature 2.

DESCRIPTION OF EMBODIMENTS

Hereinafter, with reference to the drawings, exemplary embodiments ofthe present invention will be described. Each of these exemplaryembodiments shows one exemplary aspect of the present invention, and isnot intended to limit the present invention but may be changed asappropriate within the range of the technical scope of the presentinvention. Further, in the accompanying drawings, the scale, the numberand the like in each structure are different from those in the actualstructure for the sake of clarity of each structure.

(Substrate for Semiconductor Package) First Embodiment

FIGS. 1 to 5 are schematic views showing a substrate for a semiconductorpackage 20 according to a first embodiment of the present invention.FIG. 1 is a plane view showing the substrate for the semiconductorpackage 20. FIG. 2 is a cross-sectional view taken along the line X1-X1′of FIG. 1. FIG. 3 is a cross-sectional view taken along the line X2-X2′of FIG. 1. FIG. 4 is a cross-sectional view taken along the line Y1-Y1′of FIG. 1. FIG. 5 is a cross-sectional view taken along the line Y2-Y2′of FIG. 1.

As shown in FIG. 1, the substrate for the semiconductor package 20according to the first embodiment is formed in a rectangular shape in aplane view, and a signal electrode 3 and ground electrodes 2 are formedon a mounting substrate 6. On the mounting substrate 6, the groundelectrodes 2 are arranged on both sides of the signal electrode 3 withintervals from the signal electrode 3, and the signal electrode 3 andthe ground electrodes 2 form a coplanar waveguide (CPW). A mountingregion S in which a semiconductor element 7 described below (see FIG. 6)is mounted is arranged in the center on the mounting substrate 6.Further, a punched pattern P (opening region) which is formed in arectangular shape in a plane view is formed in the mounting region S inthe coplanar waveguide on the mounting substrate 6. An outercircumferential part of the punched pattern P in the mounting region Sserves as a connection region where the semiconductor element 7 isconnected to electrodes (signal electrode 3 and ground electrodes) withbumps 9 described below (see FIG. 7) therebetween. Further, a step part4 is formed in the ground electrodes 2 in an outer circumferential partof the mounting region S on the mounting substrate 6. While the groundelectrodes 2 and the signal electrode 3 are shown as a coplanarwaveguide on the mounting substrate 6 for the sake of convenience ofdescription, other electrodes such as a power supply electrode may beprovided.

In the first embodiment, the coplanar waveguide is used on the mountingsubstrate 6, thereby capable of transmitting high-frequency signalswhile suppressing transmission loss. Specifically, since the signalelectrode 3 and the ground electrodes 2 are concentrated in an elementforming surface (a surface in a side where the semiconductor element 7is mounted) of the mounting substrate 6, which eliminates electrodes ona surface opposite to the element forming surface. Thus, there is noneed to provide a via hole to electrically connect the ground electrodes2 and the signal electrode 3 to the mounting substrate 6. Accordingly,high-frequency signals can be transmitted without using the via hole,which can reduce transmission loss.

The substrate used for the mounting substrate 6 is not particularlylimited. For example, a printed board, an organic substrate, a ceramicsubstrate may be used. Preferably, a printed board formed mainly ofpolyphenylene ether (PPE), which has low dielectric loss in highfrequency, a liquid crystal polymer (LCP) substrate, and a lowtemperature co-fired ceramic (LTCC) substrate may be used.

Further, the material of the electrodes is not particularly limited.Preferably, for example, copper (Cu) is used for the organic substrate,and silver-palladium (Ag—Pd) alloy is used for the LTCC substrate.Further, the surface treatment performed on the electrodes is notparticularly limited as well. In the first embodiment, gold (Au) platingprocessing, which is suitable for flip-chip connection of thesemiconductor element 7, is performed on a nickel (Ni) plating barrierserving as an base.

As shown in FIG. 2, the step part 4 is formed so that a thickness T2 (adistance between an upper surface of the mounting substrate 6 and anupper surface of the ground electrode 2 in the outer circumferentialpart of the mounting region S) of the ground electrode 2 in the sideopposite to the mounting region S becomes larger than a thickness T1 (adistance between the upper surface of the mounting substrate 6 and theupper surface of the ground electrode 2 in the mounting region S) of theground electrode 2 in the side of the mounting region S (T1<T2).

Accordingly, it is possible to prevent radiation noise from being leakedfrom a gap between the semiconductor element 7 and the mountingsubstrate 6 when the semiconductor element 7 is mounted above themounting substrate 6. More specifically, radiation noise occurred froman active surface of the semiconductor element 7 is shielded by the steppart 4 that serves as an electromagnetic shield wall formed in the outercircumferential part of the mounting region S on the mounting substrate6. Accordingly, since the surface of the mounting substrate 6 is notflat, the radiation noise can be prevented from propagating along thesurface of the mounting substrate 6.

Although the height (T2-T1) of the step part 4 is not particularlylimited, it is required that the step part has such a height (height ofa part serving as a dam) as to prevent an underfill resin 10 (see FIG.7) from flowing out when the underfill resin 10 is formed. In the firstembodiment, the height (T2-T1) of the step part 4 is set within a rangeof between 10 μm and 30 μm.

As shown in FIGS. 3 to 5, a thickness T3 (a distance between the uppersurface of the mounting substrate 6 and an upper surface of the signalelectrode 3) of the signal electrode 3 is substantially the same to thethickness T1 of the ground electrode 2 in the side of the mountingregion S for the whole area on the mounting substrate 6.

In the outer circumferential part of the mounting region S on themounting substrate 6, an insulator 5 is formed to cover the signalelectrode 3. Accordingly, the ground electrodes 2 and the insulator 5can be used as bases so as to prevent a conductor 8 (see FIG. 6) frombeing contacted with the signal electrode 3 when the conductor 8 isformed as an electromagnetic shield that covers the semiconductorelement 7. Furthermore, after the semiconductor element 7 is mounted,the conductor 8 may be formed on the ground electrode 2 and theinsulator 5 without any gap.

A thickness T4 (a distance between the upper surface of the mountingsubstrate 6 and an upper surface of the insulator 5) of the insulator 5is the same to the thickness T2 of the ground electrode 2 in the outercircumferential part of the mounting region S (T4=T2). Thus, the uppersurface of the insulator 5 and the upper surface of the ground electrode2 become flat, which makes it possible to form the conductor 8 on theinsulator 5 and the ground electrode 2 that serve as the bases withoutunevenness when the conductor 8 is formed after the semiconductorelement 7 is mounted.

Although the thickness T4 (the distance between the upper surface of themounting substrate 6 and the upper surface of the insulator 5) of theinsulator 5 is not particularly limited, it is required that theinsulator 5 has such a height as to serve as a dam, as is similar to theheight (T2-T1) of the step part 4. In the first embodiment, thethickness T4 of the insulator 5 is set within a range of between 10 μmand 30 μm. Further, the material of the insulator 5 is not particularlylimited. Preferably, however, for example, a solder resist material isused for the organic substrate, and a substrate material is used for theLTCC substrate.

Further, the step part 4 and a side surface part of the insulator 5 inthe side facing the mounting region S are contacted. Accordingly, thesurfaces of the whole part of the insulator 5 and the step part 4 in theside of the mounting region S become flat, which makes it possible todefinitely prevent leakage of the underfill resin 10 from the dam whenthe underfill resin 10 is formed after the semiconductor element 7 ismounted.

Further, the insulator 5 is formed to fill the gap between the signalelectrode 3 and the ground electrode 2 on the mounting substrate 6 inthe outer circumferential part of the mounting region S. Accordingly,the ground electrode 2 and the insulator 5 covering the signal electrode3 are formed without any gap, which makes it possible to prevent theconductor 8 from flowing through the gap to contact the signal electrode3 when the conductor 8 is formed after the semiconductor element 7 ismounted. Further, the conductor 8 may be definitely formed on theinsulator 5 and the ground electrode 2 without any gap.

Semiconductor Package

FIGS. 6 to 9 are schematic views showing the semiconductor package 1according to the first embodiment of the present invention. FIG. 6 is aplane view showing the semiconductor package 1. FIG. 7 is across-sectional view taken along the line X3-X3′ of FIG. 6. FIG. 8 is across-sectional view taken along the line X4-X4′ of FIG. 6. FIG. 9 is across-sectional view taken along the line Y3-Y3′ of FIG. 6.

As shown in FIGS. 6 to 9, the semiconductor package 1 according to thefirst embodiment is fixed to the substrate for the semiconductor package20 stated above with the bumps 9 therebetween, with a circuit formingsurface (active surface) of the semiconductor element 7 down. Thematerial of the bump 9 is not particularly limited. Preferably, however,a gold (Au) stud bump or a solder bump is used. Further, the type andthe size of the semiconductor element 7, and the size and the pitch ofthe bump 9 are not particularly limited.

The semiconductor package 1 includes the step part 4 formed in theground electrodes 2 and the insulator 5 formed to cover the signalelectrode 3 in the outer circumferential part of the mounting region Sin the substrate for the semiconductor package 20 described above.Accordingly, radiation noise generated from the active surface of thesemiconductor element 7 is shielded by the step part 4 that serves asthe electromagnetic shield wall formed in the outer circumferential partof the mounting region S on the mounting substrate 6.

Further, the gap between the semiconductor element 7 and the mountingsubstrate 6 is filled with the underfill resin 10, whereby thesemiconductor package 1 is firmly fixed. The underfill resin 10 isformed to the position that reaches the side surfaces of the insulator 5and the step part 4 of the ground electrode 2 (surface in the side ofthe mounting region S), and fills the gap between the semiconductorelement 7 and the mounting substrate 6. The contractile force of theunderfill resin 10 strengthens the connection states of the bumps 9, andmakes the thickness (a distance between the upper surface of theelectrode and the circuit forming surface of the semiconductor element7) of the bumps 9 small. Accordingly, the transmission loss of thehigh-frequency signals can be reduced.

The material of the underfill resin 10 is not particularly limited.Preferably, however, a material that exhibits a small difference inthermal expansion from the semiconductor element 7, and is formed of acomposite of an inorganic filler and an organic resin is used. Theunderfill resin 10 needs to be sufficiently injected without generationof any void even when pitches of input/output terminals of thesemiconductor element 7 is miniaturized to 150 μm or less and thedistance between the bumps 9 is short, for example. Further, theunderfill resin 10 needs to be injected so as not to damage thesemiconductor element 7 and the mounting substrate 6. From these pointsof view, the present inventor has found that a material formed of acomposite of an inorganic filler (maximum grain size: 5 μm or less,40-60 wt %) and an organic resin is suitable as the material of theunderfill resin 10.

The conductor 8 is formed in a closed circular shape in a plane view,and is electrically connected to the ground electrodes 2. Morespecifically, the conductor 8 is formed to cover the whole part wherethe underfill resin 10 is exposed across the semiconductor element 7 andthe mounting substrate 6 (the step part 4 and the insulator 5).Accordingly, it is possible to prevent radiation noise from being leakedfrom the fine gaps inside the underfill resin 10 and the boundarybetween the active surface of the semiconductor element 7 and theunderfill resin 10.

Although the material of the conductor 8 is not particularly limited,silver paste, which is a composite of silver (Ag) filler and epoxyresin, may be used, for example.

(Manufacturing Method of Substrate for Semiconductor Package)

Next, a manufacturing method of the substrate for the semiconductorpackage 20 in the semiconductor package 1 according to the firstembodiment will be described with reference to FIGS. 10 to 12, and 8.FIGS. 10 to 12 are process diagrams sequentially showing manufacturingprocesses of the substrate for the semiconductor package 20. FIG. 10 isan enlarged view when the step part 4 is formed in the ground electrodes2. Further, FIGS. 11 and 12 are cross-sectional views corresponding toFIG. 8 (cross-sectional views taken along the line X4-X4′ of FIG. 6).

First, the signal electrode 3 and the ground electrodes 2 are formed bypatterning electrodes formed in the upper surface of the mountingsubstrate 6. More specifically, by forming the ground electrodes 2 onboth sides of the signal electrode 3 with intervals therebetween on theupper surface of the mounting substrate 6, the coplanar waveguide isformed by the signal electrode 3 and the ground electrodes 2.

Next, a mask is formed on the ground electrode 2 in the outercircumferential part (a part in which the thickness of the groundelectrode 2 is desired to be made large) of the mounting region S. Next,the step part 4 is formed by etching the ground electrode 2 where thesurface is exposed since the mask is not formed. The step part 4 isformed so that the thickness T2 of the ground electrode 2 which is theside opposite to the side of the mounting region S becomes larger thanthe thickness T1 of the ground electrode 2 in the side of the mountingregion S (T1<T2). The height (T2-T1) of the step part 4 is required tobe such a height (height as a dam) as to prevent the underfill resin 10from flowing out when the underfill resin 10 is formed after thesemiconductor element 7 is mounted, and is set to a range of between 10μm and 30 μm (see FIG. 10). Note that the thickness T3 of the signalelectrode 3 is set to substantially identical to the thickness T1 of theground electrode 2 in the side of the mounting region S for the wholearea on the mounting substrate 6.

Next, surface treatment is performed on the ground electrode 2 and thesignal electrode 3. Specifically, in order to flip-chip connect thesemiconductor element 7, a nickel (Ni) plating barrier is applied on theupper surface of the ground electrode 2 and the signal electrode 3 asbases, and gold (Au) plating processing is further performed thereon.

Next, the insulator 5 is formed to cover the signal electrode 3 in theouter circumferential part of the mounting region S on the mountingsubstrate 6. The insulator 5 is formed so that the surface in the sideof the mounting region S of the step part 4 formed in the groundelectrodes 2 and the surface in the side of the mounting region S of theinsulator 5 are in the identical surface. The thickness T4 of theinsulator 5 is required to have such a height as to serve as a dam as issimilar to the height (T2-T1) of the step part 4, and is set to a rangeof between 10 μm and 30 μm. Further, the insulator 5 is formed to fillthe gap between the ground electrode 2 and the signal electrode 3 on themounting substrate 6 in the outer circumferential part of the mountingregion S. From the above processes, the substrate for the semiconductorpackage 20 described above is manufactured (see FIG. 11).

(Manufacturing Method of Semiconductor Package)

Next, the semiconductor element 7 is flip-chip mounted on the substratefor the semiconductor package 20 manufactured by the above processeswith the bumps 9 therebetween (see FIG. 11).

Next, as shown in FIG. 12, the gap between the semiconductor element 7and the mounting substrate 6 is filled with the underfill resin 10 usinga dispenser. At this time, it is possible to prevent the underfill resin10 from flowing outside by the function as dams of the insulator 5 andthe step part 4 in the outer circumferential part of the mounting regionS on the mounting substrate 6.

Next, as shown in FIG. 8, the conductor 8 is formed so as to cover thewhole part where the underfill resin 10 is exposed across thesemiconductor element 7 and the mounting substrate 6 (the step part 4and the insulator 5). Accordingly, it is possible to prevent radiationnoise from being leaked from the fine gaps inside the underfill resin 10and the boundary between the active surface of the semiconductor element7 and the underfill resin 10.

The conductor 8 is preferably formed by printing conductive pastedescribed above using a printed method including screen printing or padprinting, for example. Since the upper surface of the insulator 5 andthe upper surface of the step part 4 in the outer circumferential partof the mounting region S on the mounting substrate 6 are flat, theconductive paste can be preferably printed. Further, the conductor 8 canbe formed with a high yield rate by using a simple printed method, whichmakes it possible to reduce manufacturing cost of the semiconductorpackage 1.

According to the substrate for the semiconductor package 20, thesemiconductor package 1, the manufacturing method of the substrate forthe semiconductor package 20, and the manufacturing method of thesemiconductor package 1 of the first embodiment, the step part 4 isformed in the ground electrodes 2 in the outer circumferential part ofthe mounting region S on the mounting substrate 6, and the insulator 5is formed to cover the signal electrode 3 in the outer circumferentialpart of the mounting region S. Accordingly, when the semiconductorelement 7 is mounted above the mounting substrate 6, radiation noisegenerated from the active surface of the semiconductor element 7 isshielded by the step part 4 which serves as the electromagnetic shieldwall formed in the outer circumferential part of the mounting region Son the mounting substrate 6. In short, since the surface of the mountingsubstrate 6 (surface in the side of the semiconductor element 7) is notflat, there is no case that the radiation noise propagates along thesurface of the mounting substrate 6. Further, when the conductor 8 isformed as the electromagnetic shield that covers the semiconductorelement 7, the ground electrode 2 and the insulator 5 may be used as thebases so that the conductor 8 does not contact with the signal electrode3. Further, the conductor 8 may be formed on the insulator 5 and theground electrode 2 without any gap. Accordingly, it is possible toprevent radiation noise from being leaked from the gap between thesemiconductor element 7 and the mounting substrate 6 when thesemiconductor element 7 is mounted above the mounting substrate 6.

Further, since the thickness T4 of the insulator 5 is the same to thethickness T2 of the ground electrode 2 in the outer circumferential partof the mounting region S (T4=T2), the upper surface of the insulator 5and the upper surface of the ground electrode 2 become flat.Accordingly, the conductor 8 can be formed on the insulator 5 and theground electrode 2 serving as the bases and having flat upper surfaceswithout unevenness when the conductor 8 is formed after thesemiconductor element 7 is mounted. Accordingly, the conductor 8 may beformed definitely on the insulator 5 and the ground electrode 2 withoutany gap. Accordingly, it is possible to definitely prevent radiationnoise from being leaked from the gap between the semiconductor element 7and the mounting substrate 6 when the semiconductor element 7 is mountedabove the mounting substrate 6.

Further, since the step part 4 and the side surface part of theinsulator 5 in the side facing the mounting region S are contacted, thesurfaces of the whole part of the insulator 5 and the step part 4 in theside of the mounting region S become flat. Thus, the underfill resin 10can be definitely prevented from flowing from the dam when the underfillresin 10 is formed after the semiconductor element 7 is mounted. Thus,the conductor 8 can be formed on the underfill resin 10 without any gap.Accordingly, it is possible to definitely prevent radiation noise frombeing leaked from the gap between the semiconductor element 7 and themounting substrate 6 when the semiconductor element 7 is mounted abovethe mounting substrate 6.

Further, the insulator 5 is formed to fill the gap between the groundelectrode 2 and the signal electrode 3 on the mounting substrate 6 inthe outer circumferential part of the mounting region S. Thus, theinsulator 5 covering the signal electrode 3 and the ground electrode 2are formed without any gap. Accordingly, it is possible to prevent theconductor 8 from flowing through the gap to contact the signal electrode3 when the conductor 8 is formed after the semiconductor element 7 ismounted. Further, the conductor 8 can be definitely formed on theinsulator 5 and the ground electrode 2 without any gap. Accordingly, itis possible to definitely prevent radiation noise from being leaked fromthe gap between the semiconductor element 7 and the mounting substrate 6when the semiconductor element 7 is mounted above the mounting substrate6.

Further, the underfill resin 10 is formed between the semiconductorelement 7 and the mounting substrate 6. Accordingly, the contractileforce of the underfill resin 10 strengthens the connection states of thebumps 9, and makes the thickness of the bumps 9 small. Therefore, thesemiconductor package 1 that is capable of decreasing transmission lossof high-frequency signals can be provided.

Further, according to the manufacturing method of the semiconductorpackage 1 of the first embodiment, the step part 4 and the insulator 5are formed in the outer circumferential part of the mounting region S onthe mounting substrate 6, which makes it possible to prevent thematerial forming the underfill resin 10 from flowing outside by thefunctions of the step part 4 and the insulator 5 serving as dams in theprocess of forming the underfill resin 10. Accordingly, the conductor 8is formed on the underfill resin 10 without any gap, which makes itpossible to definitely prevent radiation noise from being leaked fromthe gap between the semiconductor element 7 and the mounting substrate6.

Further, a simple printed method is used as the method of forming theconductor 8. Thus, the conductor 8 can be formed with a high yield rate,which makes it possible to reduce manufacturing cost of thesemiconductor package 1.

Although the first embodiment has been explained with the semiconductorpackage using the substrate for the semiconductor package (a structurein which one semiconductor element is mounted on the substrate forpackage) as an example, it is not limited to this. For example, thepresent invention may be applied to a composite module (a structure inwhich a plurality of semiconductor elements are mounted on a substratefor module).

Second Embodiment

FIG. 13 shows an internal structure of a semiconductor package 1Aaccording to a second embodiment of the present invention. FIG. 13 is across-sectional view showing a schematic structure of the semiconductorpackage 1A according to the second embodiment corresponding to FIG. 7.As shown in FIG. 13, the semiconductor package 1A according to thesecond embodiment differs from the semiconductor package 1 described inthe first embodiment above in that a conductor 8A is formed to cover thewhole part where a semiconductor element 7 above a mounting substrate 6is exposed. The other points are similar to those in the firstembodiment; the same elements as shown in FIG. 7 are denoted by the samereference symbols, and detailed description thereof will be omitted.

As shown in FIG. 13, in the semiconductor package 1A according to thesecond embodiment, the conductor 8A that shields radiation noise isformed to cover the whole part where the semiconductor element 7 and theunderfill resin 10 above the mounting substrate 6 are exposed. Theconductor 8 according to the first embodiment is formed in the closedcircular shape in a plane view, whereas the conductor 8A of thesemiconductor package 1A according to the second embodiment is formed ina rectangular shape in a plane view.

With the semiconductor package 1A according to the second embodiment, itis possible to prevent radiation noise from being leaked from fine gapsinside the underfill resin 10, the boundary between the underfill resin10 and the active surface of the semiconductor element 7, and furtherthe upper surface of the semiconductor element 7. Accordingly, radiationnoise can be definitely prevented from being leaked from the gap betweenthe semiconductor element 7 and the mounting substrate 6.

Third Embodiment

FIG. 14 shows an internal structure of a semiconductor package 1Baccording to a third embodiment of the present invention. FIG. 14 is across-sectional view showing a schematic structure of the semiconductorpackage 1B according to the third embodiment corresponding to FIG. 7. Asshown in FIG. 14, the semiconductor package 1B according to the thirdembodiment differs from the semiconductor package 1 described in thefirst embodiment above in that an air gap 11 is formed between asemiconductor element 7 and a mounting substrate 6. The other points aresimilar to those of the first embodiment; the same elements as shown inFIG. 7 are denoted by the same reference symbols, and detaileddescription thereof will be omitted.

As shown in FIG. 14, the semiconductor package 1B according to the thirdembodiment has a hollow structure in which the air gap 11 is formedbetween the semiconductor element 7 and the mounting substrate 6. In thesemiconductor package 1B according to the third embodiment, an underfillresin 10B is formed in the connection region of bumps 9 between thesemiconductor element 7 and the mounting substrate 6. The underfillresin 10 according to the first embodiment is formed in a rectangularshape in a plane view, whereas the underfill resin 10B of thesemiconductor package 1B according to the third embodiment is formed ina closed circular shape in a plane view.

According to the semiconductor package 1B of the third embodiment, theair gap 11 is formed between the semiconductor element 7 and themounting substrate 6, and a dielectric constant of the air in the airgap 11 is smaller than a dielectric constant of the underfill resin 10in the first embodiment. By decreasing the conductivity between thesemiconductor element 7 and the mounting substrate 6, there occurs nodegradation of high frequency characteristic even when the passivationof the semiconductor element 7 is thin. In addition, it is possible toprevent radiation noise from being leaked from a gap between thesemiconductor element 7 and the mounting substrate 6 while keepingreliability of the semiconductor element connection.

Example

The present inventor has conducted experiments to demonstrate theadvantageous effects of the substrate for the semiconductor packageaccording to the present invention. More specifically, a step part isformed in the ground electrodes and an insulator that covers intervalson both sides of the signal electrode and the signal electrode areformed by the manufacturing method of the substrate for thesemiconductor package of the present invention to form theelectromagnetic shield wall, which demonstrates that the leakage of theradiation noise can be suppressed. In the following description, theexperimental results will be described.

Example

In the substrate for the semiconductor package according to the example,a pattern of a step part (height of 22 μm) was formed in groundelectrodes by the manufacturing method described above based on aprinted board having a coplanar waveguide as a mounting substrate. Thecoplanar waveguide has a thickness of 35 μm, and is mainly formed of PPEwith a copper foil. Surface treatment was performed on the surface ofthe electrode by nickel (thickness of 3 μm) and gold (thickness of 0.5μm) in this order. A solder resist material (thickness of 20 μm) wasused as an insulator that covers the intervals on both sides of thesignal electrode and the signal electrode. An element having a size of 4mm×2 mm×200 μm was used as a semiconductor element. The area of theelectromagnetic shield wall in each of the insulator and the step parton the mounting substrate was set to 4.5 mm×2.5 mm.

Based on the substrate for the semiconductor package thus manufactured,a semiconductor package was manufactured as shown below by themanufacturing method of the semiconductor package described above. Goldbumps (diameter of 80 μm) were used as bumps. The flip-chip connectionbetween the mounting substrate and the semiconductor element wasperformed by Au—Au connection, with pitches of the gold bumps of 150 μm.The underfill resin was formed in a gap between the mounting substrateand the semiconductor element by filling the gap with the material forforming the underfill resin using a dispenser, and then curing it for 30minutes at the temperature of 150°. The material of the underfill resinis a composite of filler (maximum grain size of 3 μm, and density of 50wt %) and epoxy resin. Silver paste was formed using a printed method asa conductor.

In a semiconductor package according to a comparative example, amounting substrate and a semiconductor element were flip-chip connectedbased on the mounting substrate as is similar to the example describedabove. The manufacturing process of the semiconductor package accordingto the comparative example differs from that of the semiconductorpackage according to the example described above in that the pattern ofthe step part is not formed in the ground electrodes, and the insulatorthat covers gaps on both sides of the signal electrode and the signalelectrode is not formed.

Then, for the semiconductor packages according to the example and thecomparative example, radiation noise in the semiconductor packageaccording to the example was measured based on the comparative example.The result shows that radiation noise can be prevented from being leakedfrom a gap (beside bumps) between the mounting substrate and thesemiconductor element which is the largest source for radiation noise inthe semiconductor package.

Further, for the semiconductor packages according to the example and thecomparative example, the formation state of the underfill resin in thesemiconductor device according to the example was checked based on thecomparative example. The result is as follows. In the comparativeexample, as shown in FIG. 15, the underfill resin has expanded in anirregular shape. Meanwhile, in the example, as shown in FIG. 12, theunderfill resin could be formed without flowing out to the outercircumferential part of the mounting region due to the effect of thedams of the step part and the insulator.

Further, for the semiconductor packages according to the example and thecomparative example, the formation state of the conductor in thesemiconductor package according to the example was checked based on thecomparative example. The result is as follows.

In the comparative example, as shown in FIGS. 16 and 17 (cross-sectionalviews taken along the line X5-X5′ of FIG. 16), the conductor hasexpanded to a wide range. Meanwhile, in the example, as shown in FIGS. 6to 9, the conductor could be formed in a closed circular shape in aplane view without extending to the outer circumferential part of themounting region.

From the results above, in the comparative example, the underfill resinand the conductor are formed over a wide range, resulting in impedancemismatch in the coplanar waveguide and large signal transmission loss.Meanwhile, in the example, the underfill resin and the conductor areformed without extending to the outer circumferential part of themounting region. Thus, the transmission loss of the signals can bereduced without generating impedance mismatch in the coplanar waveguide.

While the present invention has been described with reference to theexemplary embodiments, the present invention is not limited to the abovedescription. Various changes that can be understood by a person skilledin the art may be made to the configuration or the detail of the presentinvention.

This application claims the benefit of priority, and incorporates hereinby reference in its entirety, the following Japanese Patent ApplicationNo. 2009-168831 filed on Jul. 17, 2009.

REFERENCE SIGNS LIST

-   1, 1A, 1B SEMICONDUCTOR PACKAGE-   2 GROUND ELECTRODE-   3 SIGNAL ELECTRODE-   4 STEP PART-   5 INSULATOR-   6 MOUNTING SUBSTRATE-   7 SEMICONDUCTOR ELEMENT-   8 CONDUCTOR-   9 BUMP-   10 UNDERFILL RESIN-   11 AIR GAP-   20 SUBSTRATE FOR SEMICONDUCTOR PACKAGE-   S MOUNTING REGION-   T1 THICKNESS OF GROUND ELECTRODE IN OUTER CIRCUMFERENTIAL PART OF    MOUNTING REGION (DISTANCE BETWEEN UPPER SURFACE OF MOUNTING    SUBSTRATE AND UPPER SURFACE OF GROUND ELECTRODE IN OUTER    CIRCUMFERENTIAL PART OF MOUNTING REGION)-   T2 THICKNESS OF GROUND ELECTRODE IN MOUNTING REGION (DISTANCE    BETWEEN UPPER SURFACE OF MOUNTING SUBSTRATE AND UPPER SURFACE OF    GROUND ELECTRODE IN MOUNTING REGION)-   T4 THICKNESS OF INSULATOR (DISTANCE BETWEEN UPPER SURFACE OF    MOUNTING SUBSTRATE AND UPPER SURFACE OF INSULATOR)

1. A method of manufacturing a semiconductor package comprising:patterning an electrode formed on a mounting substrate having asemiconductor element mounted thereon to form a coplanar waveguideincluding a signal electrode and ground electrodes arranged on bothsides of the signal electrode with intervals therebetween; forming amask on the ground electrode in an outer circumferential part of amounting region of the semiconductor element and etching the groundelectrode in a region where the mask is not formed to form a step parthaving a larger distance between an upper surface of the mountingsubstrate and an upper surface of the ground electrode in the outercircumferential part of the mounting region than such distance in themounting region; forming an insulator that covers the signal electrodein the outer circumferential part of the mounting region; flip-chipconnecting the semiconductor element to the mounting substrate with abump therebetween to mount the semiconductor element; and forming aconductor that fills a gap between the semiconductor element and themounting substrate based on the ground electrode and the insulator so asnot to contact the signal electrode.
 2. The method of manufacturing thesemiconductor package according to claim 1, comprising filling a gapbetween the semiconductor element and the mounting substrate withunderfill resin after flip-chip connecting the semiconductor element tothe mounting substrate with the bump therebetween to mount thesemiconductor element and before forming the conductor that fills thegap between the semiconductor element and the mounting substrate basedon the ground electrode and the insulator so as not to contact thesignal electrode.
 3. The method of manufacturing the semiconductorpackage according to claim 1, comprising forming the conductor by aprinted method using conductive paste when forming the conductor thatfills the gap between the semiconductor element and the mountingsubstrate based on the ground electrode and the insulator so as not tocontact the signal electrode.